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BUF410A
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s s s s
s
SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS
3 2 1
APPLICATIONS: s SWITCH MODE POWER SUPPLIES s MOTOR CONTROL DESCRIPTION The BUF410A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and motor control applications.
TO-218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbo l V CEV V CEO V EBO IC I CM IB I BM P tot T st g Tj March 1996 Parameter Collector-Emitter Voltage (V BE = -1.5 V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 o C Storage Temperature Max Operation Junction Temperature Value 1000 450 7 15 30 3 4.5 125 -65 to 150 150 Unit V V V A A A A W
o o
C C 1/6
BUF410A
THERMAL DATA
R thj -ca se Thermal Resistance Junction-Case Max 1
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 100 ) Collector Cut-off Current (I B = 0) Emitter Cut- off Current (I C = 0) T est Con ditio ns V CE = V CEV V CE = V CEV T c = 100 o C Min . T yp. Max. 0.2 1 0.2 1 1 L = 25 mH 450 7 IB IB IB IB IB IB IB IB = = = = = = = = 0.5 A 0.5 A 2A 2A 0.5 A 0.5 A 2A 2A 0.8 2.8 0.5 2 0.9 1.5 1.1 1.5 60 45 100 2.1 8 1.1 4 0.8 0.05 0.08 1.8 0.1 0.18 500 Unit mA mA mA mA mA V V V V V V V V V V A/s A/s A/s V V V V s s s s s s V
V CE = V CEV V BE = -1.5 V o V CE = V CEV V BE = -1.5 V T c =100 C V BE = 5 V I C = 200 mA I E = 50 mA IC IC IC IC IC IC IC IC =5A =5A =10 A =10 A =5A =5A =10 A =10 A
V CEO(sus) Collector-Emitter Sustaining Voltage V EBO V CE(sat) Emitter Base Voltage (I C = 0) Collector-Emitter Saturation Voltage
Tc =100 C T c =100 C Tc =100 C T c =100 C
o o o
o
V BE(sat )
Base-Emitter Saturation Voltage
di c/dt
Rate of rise on-state Collector Current
V CC = 300 V I B1 = 0.75 A I B1 = 0.75 A I B1 = 3 A V CC = 300 V I B1 = 0.75 A I B1 = 0.75 A V CC = 300 V I B1 = 0.75 A I B1 = 0.75 A
R C = 0 t p= 3 s o Tj =25 C Tj =100 o C o T j =100 C R C = 60 o Tj =25 C Tj =100 o C R C = 60 o T j =25 C T j =100 o C VCC = 50 V R BB = 1.2 I B1 = 0.5 A VCC = 50 V R BB = 1.2 I B1 = 0.5 A o Tj =100 C V CC = 50 V R BB = 1.2 I B1 = 0.5 A o Tj =125 C VCC = 50 V R BB = 0.3 I B1 = 0.5 A
V CE (3s)
Collector-Emitter Dynamic Voltage Collector-Emitter Dynamic Voltage Storage Time Fall Time Cross Over T ime Storage Time Fall Time Cross Over T ime Maximum Collector Emitter Voltage without Snubber Storage Time Fall Time Cross Over T ime
V CE (5s)
ts tf tc ts tf tc V CEW
IC = 5 A V BB = - 5 V V clamp = 400 V L = 0.5 mH IC = 5 A V BB = - 5 V V clamp = 400 V L = 0.5 mH IC = 5 A V BB = - 5 V V clamp = 400 V L = 0.5 mH IC = 5 A V BB = 0 V clamp = 400 V L = 0.5 mH
ts tf tc
1.5 0.04 0.07
s s s
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BUF410A
ELECTRICAL CHARACTERISTICS (continued)
Symbo l ts tf tc V CEW Parameter Storage Time Fall Time Cross Over T ime Maximum Collector Emitter Voltage without Snubber Storage Time Fall Time Cross Over T ime Storage Time Fall Time Cross Over T ime Maximum Collector Emitter Voltage without Snubber T est Con ditio ns IC = 5 A V BB = 0 V clamp = 400 V L = 0.5 mH IC = 5 A V BB = 0 V clamp = 400 V L = 0.5 mH I C = 10 A V BB = -5 V V clamp = 400 V L = 0.25 mH I C = 10 A V BB = - 5 V V clamp = 400 V L = 0.25 mH ICW off = 15 A V BB = - 5 V L = 0.17 mH T j =125 oC VCC = 50 V R BB = 0.3 I B1 = 0.5 A o Tj =100 C V CC = 50 V R BB = 0.3 I B1 = 0.5 A o Tj =125 C V CC = 50 V R BB =1.2 I B1 = 2 A V CC = 50 V R BB =1.2 I B1 = 2 A o Tj =100 C V CC = 50 V R BB = 1.2 IB1 = 3 A 400 500 Min . T yp. Max. 3 0.15 0.25 Unit s s s V
ts tf tc ts tf tc V CEW
1.9 0.06 0.12 3.2 0.12 0.3
s s s s s s V
Turn-on Switching Test Circuit
Turn-off Switching Test Circuit
Turn-on SwitchingTest Waveforms.
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BUF410A
Turn-off SwitchingTest Waveforms (inductive load). Forward Biased Safe Operating Areas.
Reverse Biased Safe Operating Area
Storage Time Versus Pulse Time.
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BUF410A
TO-218 (SOT-93) MECHANICAL DATA
mm MIN. A C D E F G H L2 L3 L5 L6 R O - 4 3.95 31 12.2 4.1 - 0.157 0.5 1.1 10.8 14.7 - 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 - 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054
DIM.
A
C
L5 L3 L2
L6
D
E H F R 1 2 3
P025A
G
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BUF410A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequence of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No s license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ..
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